6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT

Franco, JacopoJacopoFrancoKaczer, BenBenKaczerEneman, GeertGeertEnemanMitard, JeromeJeromeMitardStesmans, AndreAndreStesmansAfanasiev, ValeriValeriAfanasievKauerauf, ThomasThomasKaueraufRoussel, PhilippePhilippeRousselToledano-Luque, MariaMariaToledano-LuqueCho, Moon JuMoon JuChoDegraeve, RobinRobinDegraeveGrasser, TiborTiborGrasserRagnarsson, Lars-AkeLars-AkeRagnarssonWitters, LiesbethLiesbethWittersTseng, JoshuaJoshuaTsengTakeoka, ShinjiShinjiTakeokaWang, Wei-EWei-EWangHoffmann, Thomas Y.Thomas Y.HoffmannGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/171146Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOTProceedings paper