Ge island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor

Loo, RogerRogerLooMeunier-Beillard, PhilippePhilippeMeunier-BeillardDentel, D.D.DentelGoryll, M.M.GoryllVanhaeren, DanielleDanielleVanhaerenVescan, L.L.VescanBender, HugoHugoBenderCaymax, MattyMattyCaymaxVandervorst, WilfriedWilfriedVandervorst2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5453Ge island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactorProceedings paper