Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes

Grasser, TiborTiborGrasserWaltl, MichaelMichaelWaltlWimmer, YannickYannickWimmerGoes, WolfgangWolfgangGoesKosik, R.R.KosikRzepa, GerhardGerhardRzepaResinger, HansHansResingerPobegen, GregorGregorPobegenEl-Sayed, A.A.El-SayedShluger, A.A.ShlugerKaczer, BenBenKaczer2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25337Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimesProceedings paper