A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

Chen, YangyinYangyinChenYu, ShimengShimengYuGuan, XimengXimengGuanWong, H.S.PhilipH.S.PhilipWongKittl, JorgeJorgeKittl2021-10-202021-10-2020120003-6951https://imec-publications.be/handle/20.500.12860/20448A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memoryJournal article