Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks

Vais, AbhitoshAbhitoshVaisFranco, JacopoJacopoFrancoLin, DennisDennisLinCollaert, NadineNadineCollaertMocuta, AndaAndaMocutaDe Meyer, KristinKristinDe MeyerThean, AaronAaronThean2021-10-222021-10-2220150003-6951https://imec-publications.be/handle/20.500.12860/26026Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacksJournal articlehttp://scitation.aip.org/content/aip/journal/apl/107/22/10.1063/1.4936991