Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K

Nicolett, A. S.A. S.NicolettMartino, Joao AntonioJoao AntonioMartinoSimoen, EddyEddySimoenClaeys, C.C.Claeys2021-10-012021-10-011998https://imec-publications.be/handle/20.500.12860/2804Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 KOral presentation