Hellemans, ThomasThomasHellemansVerreck, DevinDevinVerreckArreghini, AntonioAntonioArreghiniVan Den Bosch, GeertGeertVan Den BoschRosmeulen, MaartenMaartenRosmeulenHoussa, MichelMichelHoussaVan Houdt, JanJanVan Houdt2026-09-142026-09-142025979-8-3315-4884-1https://imec-publications.be/handle/20.500.12860/60337Despite charge trap flash memories being commercialized, the detailed understanding of the underlying physics remains limited. Here, we therefore evaluate common assumptions for the in- and ejection of charge carriers in the trapping layer, by comparing to measurements of both standard SONOS and engineered SONONOS devices. We find a strong impact of these assumptions on the peak of the trapped charge profile as well as on the accumulation near the blocking oxide. Finally, we highlight the need for a non-local detrapping model.engProceedings paper10.1109/sispad66650.2025.11186329WOS:001846246700052