Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

Vohra, AnuragAnuragVohraGeens, KarenKarenGeensZhao, MingMingZhaoSyshchyk, OlgaOlgaSyshchykHahn, HerwigHerwigHahnFahle, DirkDirkFahleBakeroot, BenoitBenoitBakerootWellekens, DirkDirkWellekensVanhove, BenjaminBenjaminVanhoveLanger, RobertRobertLangerDecoutere, StefaanStefaanDecoutere2022-08-312022-07-102022-07-122022-07-152022-08-3120220003-6951WOS:000817798300001https://imec-publications.be/handle/20.500.12860/40104Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT applicationJournal article10.1063/5.0097797WOS:000817798300001GANSILICONCARBON