Quantitative depth profiling of SiGe-multilayers with the atom probe

Koelling, SebastianSebastianKoellingGilbert, MatthieuMatthieuGilbertGoossens, JozefienJozefienGoossensHikavyy, AndriyAndriyHikavyyRichard, OlivierOlivierRichardVandervorst, WilfriedWilfriedVandervorst2021-10-192021-10-1920110142-2421https://imec-publications.be/handle/20.500.12860/19192Quantitative depth profiling of SiGe-multilayers with the atom probeJournal article