Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation

Hayama, K.K.HayamaTakakura, K.K.TakakuraOhyama, H.H.OhyamaMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeysRafi, J.M.J.M.RafiKokkoris, M.M.Kokkoris2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9005Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiationJournal article