Sub-10 nm low current resistive switching behavior in hafnium oxide stack

Hou, YiYiHouCelano, UmbertoUmbertoCelanoGoux, LudovicLudovicGouxLiu, L.L.LiuFantini, AndreaAndreaFantiniDegraeve, RobinRobinDegraeveYoussef, AhmedAhmedYoussefXu, ZhengZhengXuCheng, Y.Y.ChengKang, J.J.KangJurczak, GosiaGosiaJurczakVandervorst, WilfriedWilfriedVandervorst2021-10-232021-10-2320160003-6951https://imec-publications.be/handle/20.500.12860/26740Sub-10 nm low current resistive switching behavior in hafnium oxide stackJournal articlehttp://scitation.aip.org/content/aip/journal/apl/108/12/10.1063/1.4944841