AlGaN-based heterostructure grown on 4 inch Si(111) by MOVPE

Cheng, KaiKaiChengLeys, MaartenMaartenLeysDerluyn, JoffJoffDerluynBalachander, KrishnanKrishnanBalachanderDegroote, StefanStefanDegrooteGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11851AlGaN-based heterostructure grown on 4 inch Si(111) by MOVPEProceedings paper