Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

Geens, KarenKarenGeensHahn, HerwigHerwigHahnLiang, HuHuLiangBorga, MatteoMatteoBorgaCingu, DeepthiDeepthiCinguYou, ShuzhenShuzhenYouMarx, MatthiasMatthiasMarxOligschlaeger, RobertRobertOligschlaegerFahle, DirkDirkFahleHeuken, MichaelMichaelHeukenOdnoblyudov, VladimirVladimirOdnoblyudovAktas, OzgurOzgurAktasBasceri, CemCemBasceriDecoutere, StefaanStefaanDecoutere2021-10-312021-10-312021https://imec-publications.be/handle/20.500.12860/36720Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device FabricationProceedings paper