Atomically controlled processing for in-situ doping in CVD Si and Ge epitaxial growth

Murota, JunichiJunichiMurotaYamamoto, YuchiYuchiYamamotoCostina, IoanIoanCostinaTillack, BerndBerndTillackLe Thanh, VinVinLe ThanhLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-242021-10-242017-07https://imec-publications.be/handle/20.500.12860/29045Atomically controlled processing for in-situ doping in CVD Si and Ge epitaxial growthMeeting abstract