Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress

Lee, KookjinKookjinLeeKaczer, BenBenKaczerKruv, AnastasiiaAnastasiiaKruvGonzalez, MarioMarioGonzalezDegraeve, RobinRobinDegraeveTyaginov, StanislavStanislavTyaginovGrill, AlexanderAlexanderGrillDe Wolf, IngridIngridDe Wolf2022-07-012021-11-022022-06-242022-06-242022-07-0120210741-3106WOS:000701249800007https://imec-publications.be/handle/20.500.12860/37530Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical StressJournal article10.1109/LED.2021.3104885WOS:000701249800007IMPACT-IONIZATIONSTRAINCHANNELDEGRADATION