Material studies on Si:C and Si:CP epitaxial films grown using disilane, monomethylsilane and phosphine

Dhayalan, Sathish KumarSathish KumarDhayalanLoo, RogerRogerLooRosseel, ErikErikRosseelHikavyy, AndriyAndriyHikavyyShimura, YosukeYosukeShimuraNuytten, ThomasThomasNuyttenRichard, OlivierOlivierRichardBender, HugoHugoBenderDouhard, BastienBastienDouhardVandervorst, WilfriedWilfriedVandervorst2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/23765Material studies on Si:C and Si:CP epitaxial films grown using disilane, monomethylsilane and phosphineMeeting abstracthttps://ecs.confex.com/ecs/226/webprogram/Paper40652.html