Band offsets at interfaces of (100)InxGa1-xAs (0<x<0.53) with Al2O3 and HfO2

Afanasiev, ValeriValeriAfanasievStesmans, AndreAndreStesmansBrammertz, GuyGuyBrammertzDelabie, AnneliesAnneliesDelabieSioncke, SonjaSonjaSionckeO'Mahony, EEO'MahonyPovey, I.M.I.M.PoveyPemble, M.E.M.E.PembleO'Connor, E.E.O'ConnorHurley, P.K.P.K.HurleyNewcomb, S.B.S.B.Newcomb2021-10-172021-10-1720090167-9317https://imec-publications.be/handle/20.500.12860/14878Band offsets at interfaces of (100)InxGa1-xAs (0<x<0.53) with Al2O3 and HfO2Journal articlehttp://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6V0W-4VT14BY-4&_user=799533&_coverDate=09%2F30%2F2009&_rdoc=10&_fmt=hi