Electromigration and stress-induced-voiding in dual damascene Cu/low-k interconnects: a complex balance between vacancy and stress gradients

Croes, KristofKristofCroesWilson, ChrisChrisWilsonLofrano, MelinaMelinaLofranoVereecke, BartBartVereeckeBeyer, GeraldGeraldBeyerTokei, ZsoltZsoltTokei2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/16920Electromigration and stress-induced-voiding in dual damascene Cu/low-k interconnects: a complex balance between vacancy and stress gradientsProceedings paper