Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography

Kissinger, G.G.KissingerVanhellemont, JanJanVanhellemontSimoen, EddyEddySimoenClaeys, CorCorClaeysRichter, H.H.Richter2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1301Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomographyJournal article