PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms

Tallarico, AndreaAndreaTallaricoStoffels, SteveSteveStoffelsPosthuma, NielsNielsPosthumaMagnone, PaoloPaoloMagnoneMarcon, DenisDenisMarconDecoutere, StefaanStefaanDecoutereSangiorgi, EnricoEnricoSangiorgiFiegna, ClaudioClaudioFiegna2021-10-262021-10-2620180018-9383https://imec-publications.be/handle/20.500.12860/31910PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanismsJournal articlehttp://ieeexplore.ieee.org/document/8114336/