Soulie, Jean-PhilippeJean-PhilippeSoulieTokei, ZsoltZsoltTokeiSwerts, JohanJohanSwertsAdelmann, ChristophChristophAdelmann2024-04-092023-04-042024-04-092022-062380-6338https://imec-publications.be/handle/20.500.12860/41426Improved resistivity of NiAl thin films at low temperature for advanced interconnect metallizationProceedings paper10.1109/IITC52079.2022.9881310Metallization , Conductivity , Physical vapor deposition , Germanium , Silicon , Epitaxial growth