Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Mertens, HansHansMertensRitzenthaler, RomainRomainRitzenthalerHikavyy, AndriyAndriyHikavyyKim, Min-SooMin-SooKimTao, ZhengZhengTaoWostyn, KurtKurtWostynChew, Soon AikSoon AikChewDe Keersgieter, AnAnDe KeersgieterMannaert, GeertGeertMannaertRosseel, ErikErikRosseelSchram, TomTomSchramDevriendt, KatiaKatiaDevriendtTsvetanova, DianaDianaTsvetanovaDekkers, HaroldHaroldDekkersDemuynck, StevenStevenDemuynckVaisman Chasin, AdrianAdrianVaisman ChasinVan Besien, ElsElsVan BesienDangol, AnishAnishDangolGodny, StephaneStephaneGodnyDouhard, BastienBastienDouhardBosman, NielsNielsBosmanRichard, OlivierOlivierRichardGeypen, JefJefGeypenBender, HugoHugoBenderBarla, KathyKathyBarlaMocuta, DanDanMocutaHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronThean2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27005Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substratesProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=7573416