Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs

Rosseel, ErikErikRosseelProfijt, HaraldHaraldProfijtHikavyy, AndriyAndriyHikavyyTolle, JohnJohnTolleKubicek, StefanStefanKubicekMannaert, GeertGeertMannaertL'abbe, CarolineCarolineL'abbeWostyn, KurtKurtWostynHoriguchi, NaotoNaotoHoriguchiClarysse, TrudoTrudoClarysseParmentier, BrigitteBrigitteParmentierDhayalan, Sathish KumarSathish KumarDhayalanBender, HugoHugoBenderMaes, Jan WillemJan WillemMaesLoo, RogerRogerLoo2021-10-222021-10-222014-10https://imec-publications.be/handle/20.500.12860/24456Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETsMeeting abstracthttps://ecs.confex.com/ecs/226/.../Paper41397.html