Instability and defects in gate dielectric: similarity and differences between Hf-stacks and SiO2

Zhang, J.F.J.F.ZhangZhao, C.Z.C.Z.ZhaoChang, M.H.M.H.ChangZhang, W.W.ZhangGroeseneken, GuidoGuidoGroesenekenPantisano, LuigiLuigiPantisanoDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeyns2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/13261Instability and defects in gate dielectric: similarity and differences between Hf-stacks and SiO2Proceedings paper