CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON

Lauwers, AnneAnneLauwersVeloso, AnabelaAnabelaVelosoHoffmann, Thomas Y.Thomas Y.HoffmannVan Dal, MarkMarkVan DalVrancken, ChristaChristaVranckenBrus, StephanStephanBrusLocorotondo, SabrinaSabrinaLocorotondode Marneffe, Jean-FrancoisJean-Francoisde MarneffeSijmus, BramBramSijmusKubicek, StefanStefanKubicekChiarella, ThomasThomasChiarellaKmieciak, MalgorzataMalgorzataKmieciakOpsomer, KarlKarlOpsomerNiwa, MasaakiMasaakiNiwaMitsuhashi, RiichirouRiichirouMitsuhashiKottantharayil, AnilAnilKottantharayilYu, HongYuHongYuYuDemeurisse, CarolineCarolineDemeurisseVerbeeck, RitaRitaVerbeeckde Potter de ten Broeck, MurielMurielde Potter de ten BroeckAbsil, PhilippePhilippeAbsilMaex, KarenKarenMaexJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemansKittl, JorgeJorgeKittl2021-10-162021-10-162005-12https://imec-publications.be/handle/20.500.12860/10755CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiONProceedings paper