ESD protection diodes in bulk Si gate-all- around vertically stacked horizontal nanowire technology

Chen, Shih-HungShih-HungChenHellings, GeertGeertHellingsLinten, DimitriDimitriLintenMertens, HansHansMertensMocuta, AndaAndaMocutaHoriguchi, NaotoNaotoHoriguchi2021-10-272021-10-2720191530-4388https://imec-publications.be/handle/20.500.12860/32694ESD protection diodes in bulk Si gate-all- around vertically stacked horizontal nanowire technologyJournal articlehttps://ieeexplore.ieee.org/document/8576641