Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO2 Oxygen-Penetration Layers

Guo, ZixiangZixiangGuoZhang, En XiaEn XiaZhangVaisman Chasin, AdrianAdrianVaisman ChasinLinten, DimitriDimitriLintenBelmonte, AttilioAttilioBelmonteKar, Gouri SankarGouri SankarKarReed, Robert A.Robert A.ReedSchrimpf, Ronald D.Ronald D.SchrimpfFleetwood, Daniel M.Daniel M.Fleetwood2024-11-192024-06-232024-11-1920240018-9499WOS:001207225100067https://imec-publications.be/handle/20.500.12860/44080Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO2 Oxygen-Penetration LayersJournal article10.1109/TNS.2023.3346825WOS:001207225100067LOW-FREQUENCY NOISEBORDER TRAPSINGAAS FINFETSRADIATION RESPONSEOXIDEBIASDEGRADATIONDEPENDENCEINTERFACEMOSFETS