Thermal and SF6-plasma treatments for improved (sub-)1nm EOT planar and FinFET-based RMG high-k last devices and enabling a simplified scalable CMOS integration scheme

Veloso, AnabelaAnabelaVelosoBoccardi, GuillaumeGuillaumeBoccardiRagnarsson, Lars-AkeLars-AkeRagnarssonHiguchi, YuichiYuichiHiguchiArimura, HiroakiHiroakiArimuraLee, Jae WooJae WooLeeSimoen, EddyEddySimoenCho, Moon JuMoon JuChoRoussel, PhilippePhilippeRousselParaschiv, VasileVasileParaschivShi, XiaopingXiaopingShiSchram, TomTomSchramChew, Soon AikSoon AikChewBrus, StephanStephanBrusDangol, AnishAnishDangolVecchio, EmmaEmmaVecchioSebaai, FaridFaridSebaaiKellens, KristofKristofKellensHeylen, NancyNancyHeylenDevriendt, KatiaKatiaDevriendtDekkers, HaroldHaroldDekkersVan Ammel, AnnemieAnnemieVan AmmelWitters, ThomasThomasWittersConard, ThierryThierryConardVaesen, IngeIngeVaesenRichard, OlivierOlivierRichardBender, HugoHugoBenderAthimulam, RajaRajaAthimulamChiarella, ThomasThomasChiarellaThean, AaronAaronTheanHoriguchi, NaotoNaotoHoriguchi2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/23313Thermal and SF6-plasma treatments for improved (sub-)1nm EOT planar and FinFET-based RMG high-k last devices and enabling a simplified scalable CMOS integration schemeProceedings paper