Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Source/Drain Layers

Rengo, GianlucaGianlucaRengoPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyRosseel, ErikErikRosseelAyyad, MustafaMustafaAyyadMorris, RichardRichardMorrisPourtois, GeoffreyGeoffreyPourtoisLoo, RogerRogerLooVantomme, AndréAndréVantomme2022-05-022021-12-062022-05-022021nahttps://imec-publications.be/handle/20.500.12860/38571Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Source/Drain LayersProceedings paper10.1149/10404.0167ecst