On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects

Kaczer, BenBenKaczerAmoroso, S. M.S. M.AmorosoHussin, R.R.HussinAsenov, A.A.AsenovFranco, JacopoJacopoFrancoWeckx, PieterPieterWeckxRoussel, PhilippePhilippeRousselGrasser, T.T.GrasserRzepa, G.G.RzepaHoriguchi, NaotoNaotoHoriguchi2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26795On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defectsProceedings paper