Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow

Conard, ThierryThierryConardPantisano, LuigiLuigiPantisanoClaes, MartineMartineClaesDemand, MarcMarcDemandDeweerd, WimWimDeweerdDe Gendt, StefanStefanDe GendtHoussa, MichelMichelHoussaLujan, GuilhermeGuilhermeLujanRagnarsson, Lars-AkeLars-AkeRagnarssonRohr, ErikaErikaRohrSchram, TomTomSchramHooker, JacobJacobHookerRittersma, ChrisChrisRittersmaFompeyrinne, J.J.FompeyrinneLoquet, J.P.J.P.Loquet2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10253Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flowOral presentation