High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

Tang, Shun-WeiShun-WeiTangHuang, Zhen-HongZhen-HongHuangChen, Szu-ChiaSzu-ChiaChenLin, Wei-SyuanWei-SyuanLinde Jaeger, BriceBricede JaegerWellekens, DirkDirkWellekensBorga, MatteoMatteoBorgaBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereWu, Tian-LiTian-LiWu2023-04-062022-10-292023-04-0620220741-3106WOS:000861441600012https://imec-publications.be/handle/20.500.12860/40635High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown StabilityJournal article10.1109/LED.2022.3198876WOS:000861441600012DEVICES