Deep levels in high-temperature 1 MeV electron irradiated n-type czochralski silicon

Simoen, EddyEddySimoenRafi, Joan MarcJoan MarcRafiClaeys, CorCorClaeysNeimash, V.V.NeimashKraitchinski, A.A.KraitchinskiKras'ko, M.M.Kras'koTischenko, V.V.TischenkoVoitovych, V.V.VoitovychVersluys, J.J.VersluysClauws, P.P.Clauws2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8154Deep levels in high-temperature 1 MeV electron irradiated n-type czochralski siliconJournal article