Growth of high Ge content SiGe layers for high performance buried channel PMOSFET devices

Hikavyy, AndriyAndriyHikavyyWitters, LiesbethLiesbethWittersBrus, StephanStephanBrusHoffmann, Thomas Y.Thomas Y.HoffmannLoo, RogerRogerLoo2021-10-182021-10-182010-05https://imec-publications.be/handle/20.500.12860/17265Growth of high Ge content SiGe layers for high performance buried channel PMOSFET devicesMeeting abstract