Hellings, GeertGeertHellingsChen, Shih-HungShih-HungChenScholz, MirkoMirkoScholzSimicic, MarkoMarkoSimicicSchram, TomTomSchramRagnarsson, Lars-AkeLars-AkeRagnarssonHoriguchi, NaotoNaotoHoriguchiLinten, DimitriDimitriLinten2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30869On ESD gate dielectric reliability in 14nm finFET and horizontal NW technologyProceedings paper