Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency

Caparroz, Luis F.V.Luis F.V.CaparrozMartino, Joao A.Joao A.MartinoSimoen, EddyEddySimoenClaeys, CorCorClaeysAgopian, Paula G.D.Paula G.D.Agopian2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26388Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequencyProceedings paperhttp://ieeexplore.ieee.org/document/7731357/