The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal

Beer, C.S.C.S.BeerWhall, T.E.T.E.WhallParker, E.H.C.E.H.C.ParkerLeadley, D.R.D.R.LeadleyDe Jaeger, BriceBriceDe JaegerNicholas, GarethGarethNicholasZimmerman, PaulPaulZimmermanMeuris, MarcMarcMeuris2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13361The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen annealProceedings paper