Liu, YangYangLiuChen, YeYeChenBogaert, LaurensLaurensBogaertSoltanian, EmadEmadSoltanianDelli, EvangeliaEvangeliaDelliLepage, GuyGuyLepageVerheyen, PeterPeterVerheyenVan Campenhout, JorisJorisVan CampenhoutMorthier, GeertGeertMorthierRoelkens, GuntherGuntherRoelkensZhang, JingJingZhang2025-06-102025-06-1020251094-4087WOS:001502311700005https://imec-publications.be/handle/20.500.12860/45785Achieving high-power, narrow-linewidth, and low-intensity-noise (RIN) widely tunable lasers on silicon photonics (SiPh) platforms remains a critical challenge for transformative photonic applications. In this work, we present the micro-transfer printing of double-ridge InP/InGaAs semiconductor optical amplifiers (SOAs) onto a silicon photonics platform to realize on-chip widely tunable lasers. The double-ridge SOA structure enables simultaneous control of laser cavity gain and laser output optical amplification. The resulting tunable laser exhibits a wide tuning range exceeding 51 nm and delivers a waveguide-coupled output power of 10 mW per wavelength. Additionally, the device achieves a narrow linewidth of 1.6 kHz and a low RIN of approximately −140 dB/Hz. These characteristics underscore the suitability of the device for demanding applications in wavelength-division multiplexing systems and photonic sensing. This approach demonstrates a viable pathway toward compact and high-performance laser-based photonic systems-on-chip. © 2025 Optica Publishing Group under the terms of the Optica Open Access Publishing AgreementJournal article10.1364/OE.561111WOS:001502311700005CHANNEL POWER OPTIMIZATIONSEMICONDUCTOR-LASERINTEGRATION