Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness

Benato, AndreaAndreaBenatoDe Santi, CarloCarloDe SantiBorga, MatteoMatteoBorgaBakeroot, BenoitBenoitBakerootKuzma Filipek, IzabelaIzabelaKuzma FilipekPosthuma, NielsNielsPosthumaDecoutere, StefaanStefaanDecoutereMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoniMeneghini, MatteoMatteoMeneghini2024-03-112023-12-052024-03-1120230026-2714WOS:001106958600001https://imec-publications.be/handle/20.500.12860/43223Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustnessJournal article10.1016/j.microrel.2023.115133WOS:001106958600001MIS-HEMTSF(T)/F(MAX)