Series resistance effects in submicron MOS transistors operated from 300 K down to 4.2 K

Gutiérrez Dominguez, E. A.E. A.Gutiérrez DominguezDeferm, LudoLudoDefermDeclerck, GilbertGilbertDeclerck2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/184Series resistance effects in submicron MOS transistors operated from 300 K down to 4.2 KJournal article