Fabrication of strained Si NMOS transistors on thin buffer layers with selective and non-selective epitaxial growth techniques

Eneman, GeertGeertEnemanVerheyen, PeterPeterVerheyenRooyackers, RitaRitaRooyackersDelhougne, RomainRomainDelhougneLoo, RogerRogerLooCaymax, MattyMattyCaymaxMeunier-Beillard, PhilippePhilippeMeunier-BeillardDe Meyer, KristinKristinDe MeyerVandervorst, WilfriedWilfriedVandervorst2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8882Fabrication of strained Si NMOS transistors on thin buffer layers with selective and non-selective epitaxial growth techniquesMeeting abstract