Medium frequency physical vapor deposited Al2O3 and SiO2 as etch-stop-layers for amorphous Indium-Gallium-Zinc-Oxide thin-film-transistors

Nag, ManojManojNagBhoolokam, AjayAjayBhoolokamSteudel, SoerenSoerenSteudelVaisman Chasin, AdrianAdrianVaisman ChasinMaas, JorisJorisMaasGenoe, JanJanGenoeMurata, MitsuhiroMitsuhiroMurataGroeseneken, GuidoGuidoGroesenekenHeremans, PaulPaulHeremans2021-10-222021-10-2220152162-8769https://imec-publications.be/handle/20.500.12860/25681Medium frequency physical vapor deposited Al2O3 and SiO2 as etch-stop-layers for amorphous Indium-Gallium-Zinc-Oxide thin-film-transistorsJournal articlehttp://jss.ecsdl.org/content/4/5/Q38.abstract?etoc