Selective CVD growth of germanium-tin: a new approach for implementing stress in germanium-based MOSFETs

Loo, RogerRogerLooVincent, BenjaminBenjaminVincent2021-10-192021-10-192011-08https://imec-publications.be/handle/20.500.12860/19334Selective CVD growth of germanium-tin: a new approach for implementing stress in germanium-based MOSFETsJournal articlehttp://www.techdesignforums.com/eda/eda-topics/design-to-silicon/selective-cvd-growth-of-germanium-tin-a-new-approach-for-implem