Benbakhti, B.B.BenbakhtiZhang, J.F.J.F.ZhangLi, Z.Z.LiZhang, WWZhangMitard, JeromeJeromeMitardKaczer, BenBenKaczerGroeseneken, GuidoGuidoGroesenekenHall, S.S.HallRobertson, J.J.RobertsonChalker, P.P.Chalker2021-10-202021-10-2020120741-3106https://imec-publications.be/handle/20.500.12860/20350Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stackJournal article