Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors

Verreck, DevinDevinVerreckVerhulst, AnneAnneVerhulstKao, FrankFrankKaoVandenberghe, WilliamWilliamVandenbergheDe Meyer, KristinKristinDe MeyerGroeseneken, GuidoGuidoGroeseneken2021-10-212021-10-2120130018-9383https://imec-publications.be/handle/20.500.12860/23344Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistorsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6523085&matchBoolean%3Dtrue%26searchField%3DSearch_All%26queryTex