Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment

De Wolf, IngridIngridDe WolfMaes, HermanHermanMaesJones, S. K.S. K.Jones2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1175Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experimentJournal article