Dislocation density and tetragonal distortion of a GaN epilayer on Si(111): a comparative RBS/C and TEM study

Lenka, HaraHaraLenkaMeersschaut, JohanJohanMeersschautKandaswamy, Prem KumarPrem KumarKandaswamyModarresi, H.H.ModarresiBender, HugoHugoBenderVantomme, AndreAndreVantommeVandervorst, WilfriedWilfriedVandervorst2021-10-222021-10-2220140168-583Xhttps://imec-publications.be/handle/20.500.12860/24111Dislocation density and tetragonal distortion of a GaN epilayer on Si(111): a comparative RBS/C and TEM studyJournal articlehttp://www.sciencedirect.com/science/article/pii/S0168583X14002687