A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress

Simoen, EddyEddySimoenDecoutere, StefaanStefaanDecoutereClaeys, CorCorClaeysDeferm, LudoLudoDeferm2021-10-012021-10-011998https://imec-publications.be/handle/20.500.12860/2950A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stressJournal article