First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs

Capogreco, ElenaElenaCapogrecoWitters, LiesbethLiesbethWittersArimura, HiroakiHiroakiArimuraSebaai, FaridFaridSebaaiPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooMilenin, AlexeyAlexeyMileninEneman, GeertGeertEnemanFavia, PaolaPaolaFaviaBender, HugoHugoBenderWostyn, KurtKurtWostynDentoni Litta, EugenioEugenioDentoni LittaSchulze, AndreasAndreasSchulzeVrancken, ChristaChristaVranckenOpdebeeck, AnnAnnOpdebeeckMitard, JeromeJeromeMitardLanger, RobertRobertLangerHolsteyns, FrankFrankHolsteynsWaldron, NiamhNiamhWaldronBarla, KathyKathyBarlaDe Heyn, VincentVincentDe HeynMocuta, DanDanMocutaCollaert, NadineNadineCollaert2021-10-252021-10-252018-110018-9383https://imec-publications.be/handle/20.500.12860/30359First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETsJournal article10.1109/TED.2018.2871595