Quantitative retention model for filamentary oxide-based resistive RAM

Degraeve, RobinRobinDegraeveChen, MichaelMichaelChenCelano, UmbertoUmbertoCelanoFantini, AndreaAndreaFantiniGoux, LudovicLudovicGouxLinten, DimitriDimitriLintenKar, Gouri SankarGouri SankarKar2021-10-242021-10-2420170167-9317https://imec-publications.be/handle/20.500.12860/28200Quantitative retention model for filamentary oxide-based resistive RAMJournal articlehttp://www.sciencedirect.com/science/article/pii/S0167931717301788